NCEP039N10M mosfet equivalent, n-channel power mosfet.
* VDS =100V,ID =135A
RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Ver.
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.
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